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Interlayer Doping in Layered Vanadium Oxides for Low‐cost Energy Storage: Sodium‐ion Batteries and Aqueous Zinc‐ion Batteries
ChemNanoMat ( IF 2.6 ) Pub Date : 2020-07-30 , DOI: 10.1002/cnma.202000384
Zhexuan Liu 1 , Hemeng Sun 1 , Liping Qin 2 , Xinxin Cao 1, 3 , Jiang Zhou 1, 3 , Anqiang Pan 1, 3 , Guozhao Fang 1, 3 , Shuquan Liang 1, 3
Affiliation  

Advantages concerns about abundant resources, low cost and high safety have promoted sodium‐ion batteries (SIBs) and aqueous zinc‐ion batteries (AZIBs) as the most promising candidates for next generation of low‐cost large‐scale energy storage. However, the state‐of‐the‐art cathode materials are far from meeting the commercial requirements. Considering the unique open framework, layered vanadium oxides have attracted wide attention due to the high energy density and power density, while they also face critical issues such as low stability and sluggish diffusion kinetics. The interlayer doping defects, as the most common method modulating layered materials, are believed to solve these problems which will be highlighted in this review. Firstly, the characteristics and current states of various vanadium oxides in SIBs and AZIBs are summarized. Then, the research efforts related to different types of interlayer doping defects, including ionic, molecular doping, etc., are discussed. Finally, it is pointed out that it is not enough to merely achieve satisfactory performances. Hence, some perspectives about the deep understanding and interrelationship are provided for the subsequent rational design of defective layered vanadium oxides for low‐cost energy storage systems.

中文翻译:

用于低成本储能的分层钒氧化物中的层间掺杂:钠离子电池和锌离子水溶液

人们对资源丰富,成本低廉和安全性高的担忧,促使钠离子电池(SIB)和锌离子水溶液(AZIBs)成为下一代低成本大规模储能的最有希望的候选者。但是,最先进的阴极材料远不能满足商业要求。考虑到独特的开放框架,层状钒氧化物由于具有高能量密度和功率密度而备受关注,同时还面临着诸如低稳定性和缓慢的扩散动力学之类的关键问题。层间掺杂缺陷是调节层状材料的最常用方法,被认为可以解决这些问题,本综述将重点介绍这些问题。首先,总结了SIB和AZIB中各种钒氧化物的特性和当前状态。然后,讨论了与不同类型的层间掺杂缺陷有关的研究工作,包括离子,分子掺杂等。最后,指出仅仅获得令人满意的性能是不够的。因此,为后续合理设计低成本储能系统中的有缺陷的层状钒氧化物提供了有关深入理解和相互关系的一些观点。
更新日期:2020-07-30
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