Abstract In the majority of studies involving injection dependent lifetime spectroscopy, it is assumed that the investigated defect is a single-level defect following Shockley-Read-Hall recombination statistics. Nevertheless, in real life, two-level defects or multi-level defects are more common than single-level defects. In this study, we first investigated the possible consequences of misinterpreting a two-level defect as two single-level defects. A procedure to properly fit two-level defects in lifetime spectroscopy is subsequently proposed. At the end, we use boron-oxygen related defects as an experimental demonstration. Our experimental results reveal that the recombination statistics of boron-oxygen related defects cannot be explained by the coexistence of two independent single-level defects. A two-level defect parameterization appears to be more suitable.

中文翻译：

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注入相关寿命光谱中两级缺陷的研究

摘要 在大多数涉及注入依赖寿命光谱的研究中，假设所研究的缺陷是遵循肖克利-雷德-霍尔复合统计的单级缺陷。然而，在现实生活中，二级缺陷或多级缺陷比单级缺陷更常见。在这项研究中，我们首先调查了将两级缺陷误解为两个单级缺陷的可能后果。随后提出了一种在寿命光谱学中正确拟合两级缺陷的程序。最后，我们使用硼氧相关缺陷作为实验演示。我们的实验结果表明，硼氧相关缺陷的复合统计不能用两个独立的单能级缺陷的共存来解释。