Abstract This paper describes a comprehensive analysis of the degradation mechanisms of green InGaN based high-power LEDs. The combination of electrical, optical and thermal measurement allows a separation of the degradation mechanisms and their influence on the performance of the devices. The results show that the LEDs have parasitic diodes in their initial state, which influence increases over the aging period. In addition, the recombination coefficients are calculated using the ABC model, which show an increase in the non-radiative recombination coefficients (ASRH and C) during stress time. The degradation causes a current-dependent decrease in the external quantum efficiency. Furthermore, a shift of the peak wavelength can be observed, which is due to a change of internal electric fields as well as to the increase of the Shockley-Read-Hall coefficient ASRH.

中文翻译：

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绿色 InGaN/GaN 发光二极管的效率下降：退化机制和初始特性

摘要 本文综合分析了绿色 InGaN 基大功率 LED 的退化机制。电气、光学和热测量的组合允许分离退化机制及其对设备性能的影响。结果表明，LED 在初始状态下具有寄生二极管，其影响随着老化时间的推移而增加。此外，复合系数是使用 ABC 模型计算的，该模型显示在应力时间期间非辐射复合系数（ASRH 和 C）增加。退化导致外部量子效率的电流依赖性降低。此外，可以观察到峰值波长的偏移，