Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits.,Nanoscale Horizons

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Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits.
Nanoscale Horizons ( IF 8.0 ) Pub Date : 2020-07-29 , DOI: 10.1039/d0nh00163e
Maksim Andreev ₁ , Jae-Woong Choi , Jiwan Koo , Hyeongjun Kim , Sooyoung Jung , Kwan-Ho Kim , Jin-Hong Park

Affiliation

Multi-valued logic (MVL) technology is a promising approach for improving the data-handling capabilities and decreasing the power consumption of integrated circuits. This is especially attractive as conventional complementary metal–oxide–semiconductor technology is approaching its scaling and power density limits. Here, an ambipolar WSe₂ field-effect transistor with two or more negative-differential-transconductance (NDT) regions in its transfer characteristic (NDTFET) is proposed for MVL applications of various radices. The operation and charge carrier transport mechanism of the NDTFET are studied first by Kelvin probe force microscopy, electrical, and capacitance–voltage measurements. Next, strategies for increasing the number of NDT regions and engineering the NDTFET transfer characteristic are discussed. Finally, the extensibility and tunability of our concept are demonstrated by adapting NDTFETs as core devices for ternary, quaternary, and quinary MVL inverters through simulations, where only WSe₂ is employed as a channel material for all devices comprising the inverters. The MVL inverter operation principle and the mechanism of the multiple logic state formation are analyzed in detail. The proposed concept is practically verified by the fabrication of a ternary inverter.

中文翻译：

具有阶梯式栅极电介质的负差分跨导器件，用于多值逻辑电路。

多值逻辑（MVL）技术是一种有前途的方法，可以提高数据处理能力并降低集成电路的功耗。当传统的互补金属氧化物半导体技术正接近其标度和功率密度极限时，这尤其有吸引力。在这里，双极性WSe ₂提出了一种在其传输特性（NDTFET）中具有两个或更多负微分跨导（NDT）区域的场效应晶体管，用于各种半径的MVL应用。首先通过开尔文探针力显微镜，电学和电容-电压测量研究了NDTFET的操作和载流子传输机制。接下来，讨论了增加NDT区域数量和设计NDTFET传输特性的策略。最后，通过模拟将NDTFET用作三元，四元和五元MVL逆变器的核心器件，证明了我们概念的可扩展性和可调性，其中只有WSe ₂用作逆变器的所有设备的通道材料。详细分析了MVL逆变器的工作原理和多逻辑状态形成的机理。通过制造三元逆变器，实际上验证了所提出的概念。

更新日期：2020-09-28

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