Novel tunable photonic bandgap structures are proposed in this paper. Alternately placed slabs of GaAs (as barriers) and layers containing InAs/InGaAs quantum dots (active dipole elements) are considered as the main building blocks of the proposed crystals. The common transfer matrix method is utilized for characterization of the optical features of the structures. However, to take more physical phenomena into considerations, effective excitonic susceptibility is defined in a way that includes all the homogeneous and non-homogeneous broadenings. Dependences of the optical responses to the structural parameters such as the number of periods, uniformity of the quantum dots, and the size of the barrier/dots are investigated at the first step. Extracting the optimum values, tunability of the optical features of the structures by changing the crystal temperature, light incident angle and also illuminating an external pump laser is investigated then. To study the potential of the proposed structures to be used as all-optical switches, the response of the crystals to the square wave pulse series of 50 ps duration and data sequences of 10101 is studied by turning the pump pulse on and off. Results are notable for less quantum dot size fluctuations and low temperatures.

本文提出了新型可调谐光子带隙结构。交替放置的 GaAs 板（作为屏障）和包含 InAs/InGaAs 量子点（活性偶极子元素）的层被认为是所提出晶体的主要构建块。通用转移矩阵方法用于表征结构的光学特征。然而，为了考虑更多的物理现象，有效激子磁化率的定义方式包括所有均匀和非均匀展宽。第一步研究光学响应对结构参数的依赖性，例如周期数、量子点的均匀性和势垒/点的大小。提取最优值，然后研究了通过改变晶体温度、光入射角以及照射外部泵浦激光器来调节结构的光学特征。为了研究所提出的结构用作全光开关的潜力，通过打开和关闭泵浦脉冲来研究晶体对 50 ps 持续时间的方波脉冲序列和 10101 的数据序列的响应。结果以较小的量子点尺寸波动和低温着称。