We have tried to improve the responsivity of germanium-based thin-film photodetectors. It has been shown that applying a mechanical strain to the detector led to a 46.6% enhancement on the 1550 nm detection. This improvement is better than the 1310 nm case, because the bandgap shrinkage is more beneficial to the small-energy photon detection. The AuNP coating is even more attractive for responsivity enhancement of thin-film germanium (Ge) detectors. The responsivity enhancement due to the AuNP deposition is as high as 89% and 47%, for the 1310 nm and 1550 nm detections, respectively. To the best of our knowledge, this is the best responsivity enhancement for the thin-film Ge detectors reported to date.

中文翻译：

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AuNP涂层增强薄膜Ge光电探测器的出色响应性

我们试图提高锗基薄膜光电探测器的响应度。已经表明，对检测器施加机械应变可导致1550 nm检测提高46.6％。这种改进比1310 nm的情况更好，因为带隙收缩对小能量光子检测更有利。AuNP涂层对于增强薄膜锗（Ge）检测器的响应能力更具吸引力。对于1310 nm和1550 nm的检测，由于AuNP沉积导致的响应度提高分别高达89％和47％。据我们所知，这是迄今为止报道的薄膜锗探测器的最佳响应度增强。