Abstract We have researched the electrical characteristics of Au/P3HT:PCBM/n-6H–SiC/Ag Schottky barrier diode (SBD) fabricated with a polymer interface layer between 300 and 375 K temperatures. The experimentally obtained parameters from current-voltage (I–V) measurements are calculated with four different current conduction models. It is observed that parameters calculated from research findings related to different methods are compatible with each other. The barrier inhomogeneity of the metal-polymer-semiconductor (MPS) interface layer is explained by Gaussian distribution (GD). Furthermore, the mean barrier height ( Ф ‾ bo) and the modified effective Richardson constant (A**) are found by drawing Richardson curves of the sample. Finally, the electrical properties of Au/P3HT:PCBM/n-6H–SiC/Ag SBD have been determined to affect the interface materials and the interface state density (Nss) as well as the current conduction models.

中文翻译：

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Au/P3HT:PCBM/n-6H–SiC/Ag肖特基势垒二极管不同电流传导模型的电学参数研究

摘要 我们研究了由聚合物界面层制成的 Au/P3HT:PCBM/n-6H–SiC/Ag 肖特基势垒二极管 (SBD) 在 300 到 375 K 温度之间的电气特性。从电流-电压 (I-V) 测量中实验获得的参数使用四种不同的电流传导模型进行计算。可以看出，根据与不同方法相关的研究结果计算出的参数是相互兼容的。金属-聚合物-半导体 (MPS) 界面层的势垒不均匀性由高斯分布 (GD) 解释。此外，平均势垒高度 (Ф‾bo) 和修正的有效理查森常数 (A**) 是通过绘制样品的理查森曲线找到的。最后，Au/P3HT 的电学特性：