Abstract This paper presents a new approach based on a novel optimization algorithm (Equilibrium optimizer) to determine the critical characteristic parameters of the Au/GaN/GaAs Schottky barrier diodes, such as ideality factor, series resistance and barrier height. In order to simplify the nonlinear equation of the thermionic emission model; we used the Lambert W function. The evaluation of the Equilibrium optimizer algorithm performance was done, by comparing their results to that of analytical methods of Kaminski and Cheung and Cheung technique. The proposed approach (EO) has shown remarkable estimation performance in terms of the accuracy and reliability. The main Schottky diode electrical parameters, which were extracted using the EO, are the barrier height φ b n = 0.62 eV, the serial resistance RS = 16.21 Ω and the mean ideality factor n = 1.88.

中文翻译：

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使用新型优化算法优化肖特基二极管参数估计：平衡优化器

摘要 本文提出了一种基于新型优化算法（平衡优化器）的新方法，用于确定 Au/GaN/GaAs 肖特基势垒二极管的关键特性参数，如理想因子、串联电阻和势垒高度。为了简化热电子发射模型的非线性方程；我们使用了 Lambert W 函数。通过将它们的结果与 Kaminski 和 Cheung 和 Cheung 技术的分析方法的结果进行比较，对 Equilibrium 优化器算法的性能进行了评估。所提出的方法（EO）在准确性和可靠性方面表现出卓越的估计性能。使用 EO 提取的主要肖特基二极管电气参数是势垒高度 φ bn = 0.62 eV、串联电阻 RS = 16.21 Ω 和平均理想因子 n = 1。