In the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields.

在本文中，我们报告了热退火（TA）对通过金属辅助化学蚀刻方法生产的晶体硅纳米线的结构和光学性能的影响的研究。特别地，考虑到TA在SiNW阵列中引起的奥斯瓦尔德成熟，根据Lifshitz-Slyozov-Wagner理论描述了TA对纳米线长度，空隙的相对体积和尺寸分布的影响。还发现在宽的UV-VIS-IR光谱范围内，TA导致SiNWs全反射的减少。鉴于其在光子学相关领域的进一步应用，所报道的效应可用于调整晶体SiNWs阵列。