In this paper, using finite element method, a Back-Gated metal-semiconductor-metal photodetector is numerically modeled and compared with the experimental results. To do this, the time-dependent continuity equations coupled with Poisson's equation have been scaled down, discretized in two space dimensions, and solved for n_n, n_p, and ϕ variables by the Galerkin method. The I–V characteristics of this photodetector are obtained to check the validity of our calculation. The transient response of the device and their FWHM are calculated at different negative voltage applied to the back-gate. We found that the transient response of the BGMSM photodetector is highly sensitive to the beam position and, also, the FWHM is decreased with increasing the back-gating voltage. Besides, the electrostatic potential, electron, and hole number of densities profiles are numerically presented.

本文采用有限元方法对背栅金属-半导体-金属光电探测器进行了数值模拟，并与实验结果进行了比较。为此，与时间相关的连续性方程与泊松方程已按比例缩小，在两个空间维中离散化，并求解n _n，n _p和ϕ变量通过Galerkin方法。获得该光电探测器的IV特性以检查我们计算的有效性。器件及其FWHM的瞬态响应是在施加到背栅的不同负电压下计算得出的。我们发现，BGMSM光电探测器的瞬态响应对光束位置高度敏感，而且随着背栅电压的增加，FWHM也会降低。此外，数值表示了静电势，电子和空穴数分布图。