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Aluminium Nitride Layers Prepared by Nitrogen Arc Discharge on Al-Si Alloy Substrate
Journal of Materials Processing Technology ( IF 6.3 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.jmatprotec.2020.116847
Xin Li , Weida Xin , Zhen’an Ren , Yanxin Wang , Wenquan Wang

Abstract AlN strengthening layers were prepared on the surface of the Al-Si alloy substrate by nitrogen arc discharge at various currents. The strengthening layer is mainly composed of AlN, Al and a small amount of Si. In the nitriding process, the melt from the melting region transports upward to form the layer and Si works as the catalyst. In this method, the nitriding reaction is rapid and stable, which is virtually not affected by the oxygen partial pressure. The nitride layer can greatly improve the wear resistant of the sample. As the nitride current increases, the volume loss of the frictional wear test under lubricant condition decreases first and then increases. The volume loss reaches its lowest value at 90 A, which is only about 1/38 that of the substrate.

中文翻译:

氮弧放电在铝硅合金基板上制备氮化铝层

摘要 采用不同电流的氮电弧放电在Al-Si合金基体表面制备AlN强化层。强化层主要由AlN、Al和少量Si组成。在渗氮过程中,熔化区的熔体向上输送形成层,Si作为催化剂。在该方法中,渗氮反应快速且稳定,几乎不受氧分压的影响。氮化层可以大大提高样品的耐磨性。随着氮化电流的增加,润滑条件下摩擦磨损试验的体积损失先减小后增大。体积损失在 90 A 时达到最低值,仅为基板的 1/38 左右。
更新日期:2021-02-01
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