The dense ZnO-Bi₂O₃-MnO₂-xSiO₂ (ZBMS) varistors for x = 0, 1, 2, 3 wt% were fabricated by flash sintering method under the low temperature of 850 °C within 2 min. The sample temperature was estimated by a black body radiation model in the flash sintering process. The crystalline phase assemblage, density, microstructure, and electrical characteristics of the flash-sintered ZBMS varistors with different SiO₂-doped content were investigated. According to the XRD analysis, many secondary phases were detected due to the SiO₂ doping. Meanwhile, the average grain size decrease with increasing SiO₂-doped content. The improved nonlinear characteristics were obtained in SiO₂-doped samples, which can be attributed to the ion migration and oxygen absorption induced by the doped SiO₂. The flash-sintered ZBMS varistor ceramics for x = 2 wt% exhibited excellent comprehensive electrical properties, with the nonlinear coefficient of 24.5, the threshold voltage and leakage current of 385 V·mm⁻¹ and 11.8 µA, respectively.

通过闪蒸烧结法在2分钟内于850°C的低温下制造了x = 0、1、2、3 wt％的致密ZnO-Bi ₂ O ₃ -MnO ₂ - x SiO ₂（ZBMS）压敏电阻。样品温度是通过黑体辐射模型在快速烧结过程中估算的。研究了不同SiO ₂掺杂含量的ZBMS压敏烧结压敏电阻的晶相组成，密度，微观结构和电学特性。根据XRD分析，由于SiO ₂掺杂，检测到许多次级相。同时，平均晶粒尺寸随着SiO _2的增加而减小掺杂的内容。掺杂SiO _2的样品具有改善的非线性特性，这可以归因于掺杂SiO ₂引起的离子迁移和氧吸收。x = 2 wt％的ZBMS压敏烧结陶瓷表现出优异的综合电性能，其非线性系数为24.5，阈值电压和漏电流分别为385 V·mm ^-1和11.8 µA。