This study presents a compact 154 GHz receiver fabricated in a 0.13 µm SiGe BiCMOS process, which is composed of a three-stage low-noise amplifier and an improved micromixer. In order to mitigate the intrinsic DC and RF imbalance of the basic micromixer, the resistor compensation is implemented at one branch of the RF paths, which achieves superior performance. Consisting of a common-emitter and two differential cascade stages, the separate low-noise amplifier achieves a small-signal gain of 21.8 dB at 155 GHz with a 3 dB bandwidth of 22 GHz. The entire receiver exhibits a maximum conversion gain of 23.8 dB at 154 GHz with a 3 dB bandwidth of 16.5 GHz. The minimum single-sideband noise figure is measured to be 11.4 dB at 149 GHz and remains below 15 dB from 142 to 160 GHz. Exhibiting high gain, low-noise figure and considerably high bandwidth, the characterised receiver consumes competitive low power of 70.7 mW and occupies the smallest core area of only 0.12 mm ² to the best of our knowledge.

中文翻译：

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采用0.13 µm SiGe BiCMOS的紧凑型低功耗154 GHz接收器前端

这项研究提出了一种采用0.13 µm SiGe BiCMOS工艺制造的紧凑型154 GHz接收机，该接收机由三级低噪声放大器和改进的微混频器组成。为了减轻基本微型混频器固有的DC和RF不平衡，在RF路径的一个分支上实现了电阻补偿，从而实现了卓越的性能。单独的低噪声放大器由一个共发射极级和两个差分级联级组成，在155 GHz时具有2dB的小信号增益，在22 GHz时具有3 dB的带宽。整个接收器在154 GHz处具有23.8 dB的最大转换增益，在16.5 GHz处具有3 dB的带宽。在149 GHz处测得的最小单边带噪声系数为11.4 dB，在142至160 GHz范围内保持在15 dB以下。具有高增益，低噪声系数和相当高的带宽， ^2据我们所知。