Structural coloration techniques have improved display science due to their high durability in terms of resistance to bleaching and abrasion, and low energy consumption. Here, we propose and demonstrate an all-solid-state, large-area, lithography-free color filter that can switch structural color based on a doped semiconductor. Particularly, an indium-gallium-zinc-oxide (IGZO) thin film is used as a passive index-changing layer. The refractive index of the IGZO layer is tuned by controlling the charge carrier concentration; a hydrogen plasma treatment is used to control the conductivity of the IGZO layer. In this paper, we verify the color modulation using finite difference time domain simulations and experiments. The IGZO-based color filter technology proposed in this study will pave the way for charge-controlled tunable color filters displaying a wide gamut of colors on demand.

中文翻译：

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掺杂铟镓锌氧化物半导体的结构颜色切换

结构着色技术由于其在耐漂白和耐磨性以及低能耗方面的高耐用性而改善了显示科学。在这里，我们提出并演示了一种全固态，大面积，无光刻的彩色滤光片，它可以基于掺杂的半导体来切换结构色。特别地，铟镓锌氧化物（IGZO）薄膜用作无源折射率改变层。IGZO层的折射率是通过控制电荷载流子浓度来调节的。氢等离子体处理用于控制IGZO层的电导率。在本文中，我们使用有限差分时域仿真和实验来验证色彩调制。