Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.

中文翻译：

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MoSe ₂ / WSe ₂异质结构中间接激子的应变诱导俘获

理解和控制过渡金属二硫化碳（TMD）材料中的激子对于探索TMD中丰富的多体物理学及其在光子和光电器件中的应用至关重要。局部应变调制已被用作在TMD单层中创建潜在陷阱和定位层内激子的有效方法。在这里，我们调查应变对TMD异质结构中的间接激子的影响。应变位点出现窄的光谱峰，以及它们的寿命大大缩短，这表明在异质结构中形成了潜在的陷阱，并在其中捕获了间接激子。这些捕获的间接激子中没有光子反聚束，进一步揭示了它们在潜在陷阱中的弱定位。我们的研究表明，与层内激子相比，由于其独特的特性，为了获得高度局部化的间接激子，需要更窄的势阱。这些发现对于在TMD异质结构中创建长波长量子发射体以及探索TMD中的间接激子凝聚和运动具有重要意义。