There is a growing demand for human-eye-invisible short-wave infrared (SWIR) detection due to its potential in applications in areas such as medical diagnostics, environmental monitoring, and night vision. PbS colloidal quantum dots (QDs) are a promising light absorber for SWIR detection. Herein, we report on a PbS QD/InGaZnO (IGZO) heterostructure-based phototransistor and flat-panel imager for human-eye-safe SWIR photodetection and high-resolution imaging. Such hybrid phototransistors show good electrical performance and obvious photoresponse behaviors with a maximum responsivity of 10⁴ A/W and specific detectivity of 10¹² Jones under 1310 nm SWIR illumination. We found that PbS QD ligand molecules significantly impact the environmental stability. Phototransistors featuring a tetrabutylammonium iodide (TBAI) ligand exhibit excellent air stability with no serious degradation after exposure to air for 3 weeks, while phototransistors with ethanedithiol (EDT) ligands lose their SWIR detecting capability within 2 weeks. Such an improved air stability may be correlated with the TBAI ligand passivation effect that is confirmed by X-ray photoemission spectroscopy analyses. PbS QDs are patterned on the flexible IGZO transistor array by photolithographic lift-off method for implementing a more practical imaging pixel array. Furthermore, we demonstrate a prototype of 1.3 μm SWIR flat-panel image sensor array, establishing its potential application in advanced developments as a gate-tunable, highly sensitive, high-resolution, and large area flat-panel SWIR imager.

中文翻译：

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短波红外平板成像器的零维PbS量子点-InGaZnO薄膜异质结构

由于人眼不可见的短波红外（SWIR）检测在医疗诊断，环境监测和夜视等领域的应用潜力，因此对其的需求不断增长。PbS胶体量子点（QD）是一种有前途的SWIR检测光吸收剂。在此，我们报道了一种基于PbS QD / InGaZnO（IGZO）异质结构的光电晶体管和平板成像仪，用于人眼安全的SWIR光电探测和高分辨率成像。这种混合光电晶体管显示出良好的电性能和明显的光响应行为，最大响应率为10 ⁴ A / W，比检测率为10 ¹²琼斯在1310 nm SWIR照明下。我们发现PbS QD配体分子显着影响环境稳定性。具有四丁基碘化铵（TBAI）配体的光电晶体管在暴露于空气3周后显示出极好的空气稳定性，并且没有严重降解，而具有乙二硫醇（EDT）配体的光电晶体管在2周内失去了SWIR检测能力。这种改善的空气稳定性可以与通过X射线光发射光谱分析确认的TBAI配体钝化作用相关。通过光刻剥离方法在柔性IGZO晶体管阵列上图案化PbS QD，以实现更实用的成像像素阵列。此外，我们演示了1.3μmSWIR平板图像传感器阵列的原型，