Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition,Physica Status Solidi (B) - Basic Solid State Physics

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Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-28 , DOI: 10.1002/pssb.202000278
Nadine Tillner _{1,

2} , Christian Frankerl _{1,

3} , Felix Nippert ₃ , Matthew J. Davies ₁ , Christian Brandl ₁ , Rainer Lösing ₁ , Martin Mandl ₁ , Hans-Jürgen Lugauer ₁ , Roland Zeisel ₁ , Axel Hoffmann ₃ , Andreas Waag _{2,

4} , Marc Patrick Hoffmann ₁

Affiliation

Herein, the optical properties of aluminum nitride (AlN) epitaxial layers grown on sapphire substrates by metal‐organic chemical vapor deposition (MOCVD) are reported. The structures investigated in this study are grown at highly different degrees of supersaturation in the MOCVD process. In addition, both pulsed and continuous growth conditions are employed and AlN is deposited on nucleation layers favoring different polarities. The samples are investigated by photoluminescence (PL), photoluminescence excitation (PLE), and absorption spectroscopy and are found to vary significantly in absorption and emission characteristics. Two distinct absorption bands in the UV‐C spectral range are observed and examined in greater detail, with either giving rise to a significant absorption coefficient of around 1000 cm⁻¹. The corresponding defect transitions are identified by PL spectroscopy. Combined with secondary‐ion mass spectrometry (SIMS) measurements, these absorption bands are allocated to the incorporation of carbon and oxygen impurities, depending on the applied growth conditions. Furthermore, similarities with other epitaxial growth techniques serving as basis for UV‐C applications are highlighted. These results are highly relevant for a better understanding of absorption issues in AlN templates grown by various deposition techniques. In addition, consequences for the growth of efficient UV‐C devices by MOCVD on sapphire substrates are outlined.

中文翻译：

金属有机化学气相沉积法在蓝宝石衬底上生长的氮化铝外延层中的点缺陷诱导的UV-C吸收

本文报道了通过金属有机化学气相沉积（MOCVD）在蓝宝石衬底上生长的氮化铝（AlN）外延层的光学特性。在这项研究中研究的结构在MOCVD工艺中以高度不同的过饱和度生长。另外，采用脉冲和连续生长条件，并且AlN沉积在有利于不同极性的成核层上。通过光致发光（PL），光致发光激发（PLE）和吸收光谱对样品进行了研究，发现样品的吸收和发射特性发生了显着变化。在UV-C光谱范围内观察到两个不同的吸收带，并进行了更详细的检查，每个吸收带都会产生约1000 cm ^-1的显着吸收系数。相应的缺陷转变通过PL光谱法鉴定。结合二次离子质谱（SIMS）测量，这些吸收带根据所应用的生长条件分配给碳和氧杂质的结合。此外，强调了与其他外延生长技术的相似之处，这些技术是UV-C应用的基础。这些结果与更好地理解通过各种沉积技术生长的AlN模板中的吸收问题高度相关。此外，还概述了MOCVD在蓝宝石衬底上生长有效UV-C器件的后果。

更新日期：2020-07-28

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