Nanowire (NW)-based photodetectors (PDs) have gained considerable attention both scientifically and technologically over the past few decades due to their potential in terms of performance, device integration, and structural utilities. III-V compound semiconductors are suitable for ultrafast photodetection over a broad spectrum from deep ultraviolet (UV) to terahertz (THz) due to their tunable optical bandgap, high electron mobility, high aspect ratio, low defects/dislocations, and optical/electrical properties. As such, III-V NWs are perfect candidates to improve PD performance with better antireflection, higher photon trapping, and larger scattering cross-sections relative to their thin-film counterparts. Despite the enormous efforts made in development of III-V semiconductors, their potential for broadband PDs has not been sufficiently detailed. Hence, we herein provide a comprehensive review of III-V NW PDs in a broad operating excitation range from UV to THz based on recent developments in device structures and their enhanced compatibility with flexible substrates along with their prospects in future research fields.

由于基于纳米线（NW）的光电探测器（PD）在性能，设备集成和结构实用性方面的潜力，在过去的几十年中，它们在科学和技术上都受到了广泛的关注。III-V型化合物半导体具有可调光带隙，高电子迁移率，高长宽比，低缺陷/位错以及光学/电学性质，因此适合在从深紫外（UV）到太赫兹（THz）的宽光谱范围内进行超快速光电检测。 。因此，III-V NW是相对于其薄膜同类产品，具有更好的抗反射性，更高的光子俘获率和更大的散射横截面的PD性能的理想之选。尽管在III-V半导体的开发方面做出了巨大的努力，但它们对于宽带PD的潜力还没有得到足够详细的介绍。