In this work, a novel three-dimensional (3D) structure of silicon detector: 3D-Compound-Shell-Electrode detector (3DCSED), based on the 3D-Trench-Electrode detector and 3D-Open-Shell-Electrode detector (3DOSED), is proposed. In a 3DCSED, an open trench electrode will be etched about 10% of the detector thickness from the bottom side of the detector to meet the close trench electrode etched about 90% of the detector thickness from the top side. This not only makes the unit structure stable in the fabrication process, but also improves the detection efficiency through the optimization of the electrode structure compared to the conventional 3D-Trench-Electrode detector. In order to optimize the 3DCSED structure, it is important to study 3DCSED’s electrical properties by full 3D technology computer-aided design (TCAD) simulations. From the electric field distribution results, detector charge collection efficiency has been simulated and optimized by incorporating charge trapping caused by irradiation. Due to the highly doped trench walls, each pixel cell is electrically isolated to ensure a uniform electric field distribution. However, each pixel cell is physically connected to its neighboring cells, therefore also connected to the Si substrate, through the small portion of broken electrodes in the 3DOSED bulk (about 10% of the detector thickness from the bottom side of the detector). Furthermore, current–voltage (I–V) characteristics and full depletion voltage have been analyzed to study the detector’s properties. We also propose a method to fabricate the 3DCSED. In this method, the deep etching is processed by Deep Reacting Ion Etching (DRIE) or laser with respective processing procedures.

在这项工作中，一种新颖的三维（3D）硅检测器结构：基于3D-Trench-电极检测器和3D-Open-Shell-Electrode检测器（3DOSED）的3D-复合壳-电极检测器（3DCSED） ，建议。在3DCSED中，开放式沟槽电极将从检测器的底面蚀刻掉约10％的检测器厚度，以满足封闭的沟槽电极从顶面蚀刻出约90％的厚度。与传统的3D-Trench-电极检测器相比，这不仅使单元结构在制造过程中稳定，而且通过优化电极结构提高了检测效率。为了优化3DCSED结构，通过完整的3D技术计算机辅助设计（TCAD）仿真研究3DCSED的电性能非常重要。从电场分布结果来看，通过结合由辐照引起的电荷捕获，可以模拟和优化检测器的电荷收集效率。由于高掺杂的沟槽壁，每个像素单元被电隔离以确保均匀的电场分布。但是，每个像素单元都通过3DOSED块中一小部分破损电极（从检测器底侧起大约占检测器厚度的10％）物理连接到其相邻单元，因此也连接到Si衬底。此外，已经分析了电流-电压（IV）特性和全耗尽电压以研究探测器的特性。我们还提出了一种制造3DCSED的方法。用这种方法