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Burning and Radiance Properties of Si in AP/HTPB based Compositions
Infrared Physics & Technology ( IF 3.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.infrared.2020.103446
Jian Ju , lei Wang , Jie Liu , Hua Guan

Abstract Silicon (Si) has high caloric power and its combustion product silica (SiO2) shows high emissivity in the far infrared (8–14 μm). The study adds different contents of Si into the Ammonium Perchlorate/Hydroxyl-terminated polybutadiene (AP/HTPB) based compositions, aiming to investigare the influence of Si on the burning and radiance properties of AP/HTPB based compositions by using a FTIR remote-sensing spectrometer, a Fourier Transform Infrared Spectrometer, a far-infrared thermal imager and a synchronous thermal analysis instrument. The experimental results show that the combustion oxidation reaction of Si is restricted by the oxygen balance of the system. When the oxygen balance exceeds 25 (Si content is greater than 15%), the insufficient oxygen supply makes the combustion rate significantly reduced from 0.52 g/s to 0.36 g/s, and Si cannot be closely related to the infrared performance and combustion of the AP/HTPB agent. When the Si content is less than 15%, the infrared radiation energy of the entire infrared band of AP/HTPB can be increased, and as the Si content increases, the radiation temperature increases rapidly from 342 °C to 1070 °C, and the far-infrared radiation intensity increases from 1.56 W/Sr to 7.81 W/Sr. The smallest mid-to-far infrared radiation ratio of 3 can be obtained when the Si content is 15%. Therefore, Si has a positive effect on improving the infrared radiation performance of AP/HTPB.

中文翻译:

基于 AP/HTPB 的组合物中 Si 的燃烧和辐射特性

摘要 硅 (Si) 具有高热能,其燃烧产物二氧化硅 (SiO2) 在远红外 (8–14 μm) 中显示出高发射率。本研究在高氯酸铵/羟基封端的聚丁二烯 (AP/HTPB) 基组合物中添加不同含量的 Si,旨在通过 FTIR 遥感研究 Si 对 AP/HTPB 基组合物燃烧和辐射特性的影响光谱仪、傅里叶变换红外光谱仪、远红外热像仪和同步热分析仪。实验结果表明,Si的燃烧氧化反应受到系统氧平衡的限制。当氧平衡超过25(Si含量大于15%)时,供氧不足使燃烧速度从0.52g/s显着降低到0.36g/s,并且Si不能与AP/HTPB剂的红外性能和燃烧密切相关。当Si含量小于15%时,AP/HTPB整个红外波段的红外辐射能量可以增加,随着Si含量的增加,辐射温度从342℃迅速升高到1070℃,远红外辐射强度从 1.56 W/Sr 增加到 7.81 W/Sr。当Si含量为15%时,可以获得最小的中远红外辐射比为3。因此,Si对提高AP/HTPB的红外辐射性能具有积极作用。辐射温度从342℃迅速升高到1070℃,远红外辐射强度从1.56 W/Sr升高到7.81 W/Sr。当Si含量为15%时,可以获得最小的中远红外辐射比为3。因此,Si对提高AP/HTPB的红外辐射性能具有积极作用。辐射温度从342℃迅速升高到1070℃,远红外辐射强度从1.56 W/Sr升高到7.81 W/Sr。当Si含量为15%时,可以获得最小的中远红外辐射比为3。因此,Si对提高AP/HTPB的红外辐射性能具有积极作用。
更新日期:2020-11-01
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