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Sulfur promoted n-π* electron transitions in thiophene-doped g-C3N4 for enhanced photocatalytic activity
Chinese Journal of Catalysis ( IF 16.5 ) Pub Date : 2021-03-01 , DOI: 10.1016/s1872-2067(20)63674-9
Feiyue Ge , Shuquan Huang , Jia Yan , Liquan Jing , Feng Chen , Meng Xie , Yuanguo Xu , Hui Xu , Huaming Li

Abstract Expanding the optical absorption range of photocatalysts is still a key endeavor in graphitic carbon nitride (g-C3N4) studies. Here, we report on a novel thiophene group extending the optical property, which is assigned to n-π* electronic transitions involving the two lone pairs on sulfur (TLPS). The as-prepared samples, denoted as CN-ThAx (where x indicates the amount of ThA added, mg), showed an additional absorption above 500 nm as compared to pristine g-C3N4. Further, the thiophene group enhanced charge carrier separation to suppress e−/h+ pair recombination. The experimental results suggest that the thiophene group can obstruct the polymerization of melem to generate a large plane, thus exposing the lone electron pairs on the sulfur. The photocatalytic activity was evaluated in the decomposition of bisphenol A and H2 evolution. Compared with g-C3N4, the optimized CN-ThA30 sample led to a 6.6- and 2-fold enhancement of the degradation and H2 generation rates, respectively. The CN-ThA30 sample allowed for synchronous H2 production and BPA decomposition.

中文翻译:

硫促进了噻吩掺杂的 g-C3N4 中的 n-π* 电子跃迁以增强光催化活性

摘要 扩大光催化剂的光吸收范围仍然是石墨氮化碳 (g-C3N4) 研究的关键。在这里,我们报告了一种扩展光学性质的新型噻吩基团,该基团被分配给涉及硫上的两个孤对电子对 (TLPS) 的 n-π* 电子跃迁。所制备的样品,表示为 CN-ThAx(其中 x 表示添加的 ThA 量,mg),与原始 g-C3N4 相比,在 500 nm 以上显示出额外的吸收。此外,噻吩基团增强了电荷载流子分离以抑制 e-/h+ 对复合。实验结果表明,噻吩基团可以阻碍蜜勒胺的聚合产生大平面,从而暴露硫上的孤电子对。在分解双酚 A 和放出 H2 方面评估了光催化活性。与 g-C3N4 相比,优化后的 CN-ThA30 样品使降解率和 H2 生成率分别提高了 6.6 倍和 2 倍。CN-ThA30 样品允许同步 H2 生产和 BPA 分解。
更新日期:2021-03-01
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