Abstract

In this paper, we report the experimental results of the effect of the initial buffer layer on the substrate surface and the process medium on the possibility and features of the formation of Si_1 – xGe_x nanoclusters (Si, Ge, and SiGe). We proposed a mechanism for the formation of silicon, germanium, and silicon–germanium nanoclusters on buffer layers of amorphous silicon, silicon nitride, and silicon, dysprosium, and yttrium oxides. The effect of the initial buffer layer on the substrate surface under the film deposition conditions of nanostructured silicon doped with germanium (NSS(Ge)) on the configuration, size, and surface concentration of nanocrystals is shown.

中文翻译：

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Si 1-x Ge x结构中缓冲层对基体表面和过程介质对纳米簇形成的影响的研究

摘要

在本文中，我们报告了初始缓冲层对基板表面和处理介质的影响对形成Si _{1 –  x} Ge _x纳米团簇（Si，Ge和SiGe）的可能性和特征的实验结果。我们提出了在非晶硅，氮化硅以及硅，和钇氧化物的缓冲层上形成硅，锗和硅锗纳米团簇的机制。示出了在掺杂锗（NSS（Ge））的纳米结构化硅的膜沉积条件下，初始缓冲层在基板表面上对纳米晶体的构型，尺寸和表面浓度的影响。