In this study, the synthesis of single crystals of solid solutions Ge[Formula: see text]Si[Formula: see text] from the gas phase was performed in two different variants. Here, the vapor phase is created in a closed volume. A special ampoule has been made for this purpose. Ge–Si is placed near one end of the ampoule. A temperature gradient is created along the ampoule. The temperature of the hot zone was chosen to be [Formula: see text]C and the temperature of the cold zone to be [Formula: see text]C. It has been found that single crystals can form not only on the polycrystalline layer, but also from separate centers on the walls of the ampoule.

中文翻译：

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Ge-Si系单晶的气相合成

在这项研究中，从气相合成固溶体 Ge[公式：见正文]Si[公式：见正文]的单晶以两种不同的变体进行。在这里，气相在封闭的体积中产生。为此目的制作了一个特殊的安瓿。Ge-Si 放置在安瓿的一端附近。沿安瓿产生温度梯度。选择热区温度为[公式：见正文]C，冷区温度为[公式：见正文]C。已经发现，单晶不仅可以在多晶层上形成，而且可以从安瓿壁上的不同中心形成。