Tin dioxide (SnO2) thin films are obtained from resistive evaporation of metallic Sn followed by thermal oxidation at different temperatures in the range 200–500[Formula: see text]C. Results show that, besides the thickness of the evaporated Sn thin film, the oxidation process of Sn into SnO2 is highly dependent on the annealing time and temperature, presenting tin monoxide (SnO), as an intermediate compound, result of partial oxidation of the metallic Sn at intermediary time and temperature. The optical and electrical properties of the Sn thin films are altered by the oxidation degree of Sn into SnO[Formula: see text]. These important characteristics are evaluated through UV-Vis, SEM, EDS, XRD and Impedance Spectroscopy. Increase in the optical bandgap energy as well as in the surface charge density, verified by electrical impedance, are observed on samples with higher annealing temperature and time, which indicate sequential oxidation process in these films.

中文翻译：

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Sn 热氧化产生 SnOx 薄膜的动态时间-温度相关过程：阻抗光谱研究

二氧化锡（SnO2) 薄膜是通过金属 Sn 的电阻蒸发然后在 200-500 范围内的不同温度下热氧化获得的[​​公式：见文本]C。结果表明，除了蒸发的 Sn 薄膜的厚度，Sn 氧化成 SnO 的过程2高度依赖于退火时间和温度，呈现一氧化锡 (SnO) 作为中间化合物，是金属 Sn 在中间时间和温度下部分氧化的结果。Sn薄膜的光学和电学性质会随着Sn氧化成SnO的程度而改变[公式：见正文]。这些重要特性通过 UV-Vis、SEM、EDS、XRD 和阻抗光谱进行评估。在具有较高退火温度和时间的样品上观察到通过电阻抗验证的光学带隙能量以及表面电荷密度的增加，这表明这些薄膜中的顺序氧化过程。