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Deposition and patterning of electrodes on the vertical sidewalls of deep trenches
Journal of Micromechanics and Microengineering ( IF 2.3 ) Pub Date : 2020-07-26 , DOI: 10.1088/1361-6439/aba377
L Bonnin 1, 2 , A Piot 1, 2, 3 , N Isac 1 , A Bosseboeuf 1
Affiliation  

A process able to produce at wafer scale patterned electrodes on the vertical sidewalls of trenches is described and investigated in detail. It is based on metal evaporation at oblique incidence through a shadow mask made in a dry photoresist film. A full model of the deposition and patterning process is established in order to map the shape as well as the thickness and density of patterned electrodes with or without wafer rotation. In the case of wafer rotation, the modelling is based on the analogy of each shadow mask edge with the gnomon of a sundial. The final electrode shape is then computed from the trajectories followed by the shadows of the gnomons. Offset of the substrate tilt axis with respect to substrate plane, and position on the wafer surface, are considered in the analysis, as well as the variation of film density with incidence angle. Advantages and limitations of the proposed process are discussed. It is shown that sidewall electrodes isolated or connected to to...

中文翻译:

在深沟槽的垂直侧壁上沉积和构图电极

描述并详细研究了能够在晶片尺寸上在沟槽的垂直侧壁上产生图案化电极的工艺。它基于通过干光刻胶膜中制成的荫罩以倾斜入射的方式进行的金属蒸发。建立沉积和图案化过程的完整模型,以便在有或没有晶片旋转的情况下绘制出图案化电极的形状以及厚度和密度。在晶片旋转的情况下,建模是基于每个荫罩边缘与日的模样的类比。然后根据轨迹以及随后的侏儒阴影计算最终的电极形状。分析中考虑了基板倾斜轴相对于基板平面的偏移量以及在晶圆表面上的位置,以及薄膜密度随入射角的变化。讨论了所提出方法的优点和局限性。显示侧壁电极隔离或连接到...
更新日期:2020-07-27
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