In this paper, asymmetric interdigital Ti and Au electrodes have been successfully patterned on the β -Ga 2 O 3 films which are prepared by metal-organic chemical vapor deposition. Both photoconductive and photovoltaic modes have been observed under ultraviolet illumination, respectively. The device exhibits a low current density of 0.32 nA cm −2 at 20 V in dark condition. As the 254 nm illumination intensity increases above 400 μ W cm −2 , the device exhibits obvious self-powered characteristics with a responsivity of 0.4 mA W −1 , providing a specific detectivity of 1.8 × 10 12 Jones, a fast response time ( τ d = 50 ms), and a high photo-to-dark current ratio of ∼10 5 . As the positive bias was applied to Au/Ga 2 O 3 contact, the photodetector presents an improved performance with a responsivity of ∼0.3 A W −1 and a specific detectivity of 2.2 × 10 14...

中文翻译：

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基于平面Au / Ga 2 O 3肖特基结的自供电β-Ga 2 O 3日盲光电探测器

本文成功地在金属有机化学气相沉积制备的β-Ga 2 O 3薄膜上构图了不对称的叉指式钛和金电极。分别在紫外线照射下观察到光电导和光伏模式。在黑暗条件下，该器件在20 V时具有0.32 nA cm -2的低电流密度。当254 nm的照明强度增加到400μW cm -2以上时，该器件表现出明显的自供电特性，其响应度为0.4 mA W -1，提供了1.8×10 12 Jones的比检测率，响应时间短（τ d = 50 ms），高的光暗电流比约为10 5。当将正偏压施加到Au / Ga 2 O 3触点上时，光电探测器表现出更高的性能，其响应度约为0.3 AW -1，比灵敏度为2。