The large bandgap (∼4.8 eV), high critical field strength (∼8 MV cm −1 ) and high saturation velocity (∼2e7 cm s −1 ) are the key enabling material parameters of gallium oxide (GO) which allows it for designing high power radio frequency (RF) MOSFET. In MOS device-based applications, these material parameters combined with large area native substrates and ion-implantation technology results in exceptionally low ON-state power losses, high-speed power, RF switching, and more stable high-temperature operation. This paper comprehensively focuses on reviewing the latest progress of ultra-wide bandgap GO MOSFET for RF application. The performance of GO MOS devices is fully discussed and compared. Finally, potential solutions to the challenges of GO-based MOSFET for RF applications are also discussed and explored.

中文翻译：

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评论—设计用于RF应用的氧化镓MOSFET的最新进展

带隙大（〜4.8 eV），高临界场强（〜8 MV cm -1）和高饱和速度（〜2e7 cm s -1）是使氧化镓（GO）得以设计的关键材料参数高功率射频（RF）MOSFET。在基于MOS器件的应用中，这些材料参数与大面积原生衬底和离子注入技术相结合，可实现极低的导通状态功率损耗，高速功率，RF开关以及更稳定的高温运行。本文将重点全面回顾用于射频应用的超宽带隙GO MOSFET的最新进展。全面讨论并比较了GO MOS器件的性能。最后，还讨论和探索了针对RF应用的基于GO的MOSFET挑战的潜在解决方案。