Fermi level pinned molecular donor/acceptor junctions: reduction of induced carrier density by interfacial charge transfer complexes,Journal of Materials Chemistry C

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Fermi level pinned molecular donor/acceptor junctions: reduction of induced carrier density by interfacial charge transfer complexes
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-07-27 , DOI: 10.1039/d0tc02774j
Paul Beyer _{1,

2,

3} , Eduard Meister _{3,

4,

5} , Timo Florian _{1,

2,

3} , Alexander Generalov _{6,

7,

8} , Wolfgang Brütting _{3,

4,

5} , Norbert Koch _{1,

2,

3,

3,

9} , Andreas Opitz _{1,

2,

3}

Affiliation

Increased hole density in an electron donor-type organic semiconductor can be achieved by deposition of a strong acceptor-type molecular layer on top, and has been shown to enable adjusting the carrier density in organic field effect transistors (OFETs). This interfacial charge transfer is due to simultaneous Fermi level (E_F) pinning of the donor's highest occupied level and the acceptor's lowest unoccupied level. Here, we investigate the electrical properties of such an E_F-pinned junction formed by diindenoperylene (DIP, as donor) and hexafluoro-tetracyano-naphthoquinodimethane (F6, as acceptor) in OFETs, as well as its electronic properties by photoelectron spectroscopy and electrostatic modelling. We find that, in addition to the E_F-pinning induced integer charge transfer across the interface, DIP and F6 form charge transfer complexes (CPXs) at their junction. The molecularly thin CPX interlayer acts as insulator and significantly reduces the density of carriers induced on either side of the junction, compared to a scenario without such an interlayer. CPX formation is thus unfavourable for the effectiveness of controlling carrier density at molecular donor/acceptor junctions by E_F-pinning.

中文翻译：

费米能级固定的分子供体/受体连接：通过界面电荷转移复合物降低诱导的载流子密度

电子供体型有机半导体中空穴密度的增加可以通过在顶部沉积坚固的受体型分子层来实现，并且已经显示出可以调节有机场效应晶体管（OFET）中的载流子密度。这种界面电荷转移是由于供体的最高占用水平和受体的最低未占用水平同时发生费米能级（E _F）固定。在这里，我们研究了由二茚并oper戊二烯（DIP，作为供体）和六氟-四氰基-萘醌二甲烷（F6，作为受体）在EFET中形成的这种E _F固定结的电学性质，以及通过光电子能谱和静电学测定的电子性质。造型。我们发现，除了E_F钉跨界面诱导整数电荷转移，DIP和F6在其结点形成电荷转移复合物（CPX）。与没有这种中间层的情况相比，分子薄的CPX中间层充当绝缘体，并显着降低了在结的两侧感应的载流子密度。因此，CPX的形成不利于通过E _F钉扎控制分子供体/受体连接处的载流子密度的有效性。

更新日期：2020-08-03

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