This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an eight-band Kane model (four bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the eight-band model exhibits quantum interference between the various possible pathways that is not observed in previous two-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, ${E_g}$, scaling using -band tunneling and perturbation theories that show agreement with the predicted $E_g^{- 7}$ dependence; however, for those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both two-band theories. On the other hand, our eight-band model shows excellent agreement with the spectral data. We then use our eight-band theory to predict the 3PA spectra for 15 different semiconductors in their zinc-blende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.

中文翻译：

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直接间隙半导体中的三光子吸收光谱和带隙定标

本文介绍了九种直接隙半导体的三光子吸收（3PA）测量结果，包括ZnSe，ZnS和GaAs的完整3PA光谱。这些结果以及我们使用八波段Kane模型（四个带双自旋简并的波段）的3PA理论，有助于解释迄今为止文献中实验与理论之间的重大分歧。八频带模型中的3PA表现出各种可能的路径之间的量子干扰，这在以前的两频带理论中没有观察到。我们介绍了InSb，GaAs，CdTe，CdSe，ZnTe，CdS，ZnSe，ZnO和ZnS中简并3PA系数的测量结果。我们使用-band隧穿和扰动理论研究带隙$ {E_g} $的缩放，该理论表明与预测的$ E_g ^ {-7} $一致依赖 但是，对于那些我们测量了完整3PA光谱的半导体，我们在两个波段的理论上都观察到了明显的差异。另一方面，我们的八波段模型与光谱数据显示出极好的一致性。然后，我们使用八频带理论来预测15种不同的半导体（闪锌矿形式）的3PA光谱。这些结果可以预测和解释各种窄带到宽带隙半导体的3PA系数。