Herein, we examined changes in the interfacial properties of organic light-emitting diodes when n-decyltrimethoxysilane (CH3SAM) was deposited on the surface of an indium tin oxide (ITO) electrode for various deposition times. It was revealed that the interfacial properties varied with deposition time. As the latter increased, so did the measured value of the contact angle, and ITO substrate exhibited a lower wettability. The contact angle measurements for bare ITO at 1, 10, 30, and 90 min were 57.41°, 63.43°, 73.76°, 81.47°, respectively, and the highest value obtained was 93.34°. In addition, the average roughness and work function of the ITO were measured using atomic force microscopy and X-ray photoelectron spectroscopy. As the deposition time of CH3SAM on the ITO substrates increased, it was evident that the former was well aligned with the latter, improving surface modification. The work function of CH3SAM, modified on the ITO substrates, improved by approximately 0.11 eV from 5.05–5.16 eV. The introduction of CH3SAM to the ITO revealed the ease of adjustment of the characteristics of ITO substrates.

中文翻译：

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正癸基三甲氧基硅烷改性的ITO的界面特性变化

本文中，我们研究了在不同沉积时间下将正癸基三甲氧基硅烷（CH3SAM）沉积在氧化铟锡（ITO）电极表面上时有机发光二极管的界面特性的变化。揭示了界面性质随沉积时间而变化。随着后者的增加，接触角的测量值也增加，并且ITO基板表现出较低的润湿性。裸ITO在1、10、30和90分钟时的接触角测量分别为57.41°，63.43°，73.76°，81.47°，获得的最大值为93.34°。另外，使用原子力显微镜和X射线光电子能谱法测量了ITO的平均粗糙度和功函数。随着CH3SAM在ITO衬底上的沉积时间增加，显然前者与后者很好地对齐，改善了表面改性。在ITO基板上进行修饰的CH3SAM的功函数从5.05–5.16 eV提高了约0.11 eV。将CH3SAM引入ITO显示出容易调整ITO基板的特性。