In this work, we design and simulate a new class AB second generation current conveyor (CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET). The performance of the proposed CNTFET based class AB CCII (CNTFET‐CCII) has been optimized by altering the number of carbon nanotubes (CNTs) (N), CNT pitch (S), and CNT diameter (D_CNT). The proposed CCII has been compared with the conventional CMOS‐based class AB CCII (CMOS‐CCII). The simulation study has revealed that in the proposed CCII, the voltage and current bandwidth (BW) have enhanced by two orders, terminal X resistance is ~31% less, Y resistance has increased by two orders, total harmonic distortion and power consumption have got reduced by ~62% and ~56% respectively in comparison to the conventional CMOS‐CCII. The proposed CNTFET‐CCII has been used to realize square/triangular waveform generators for the first time. It has been observed that the proposed CCII‐based waveform generators give distortion less output and temperature insensitive behavior with a very wide frequency range from ~161 KHz down to 0.79 Hz. Furthermore, seven times reduced power is achieved in the proposed CCII‐based waveform generator in comparison the conventional CMOS‐based wave generator.

中文翻译：

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基于CNTFET的AB类电流传送器II：设计，分析和波形发生器应用

在这项工作中，我们设计并模拟了采用32 nm技术节点碳纳米管场效应晶体管（CNTFET）的新型AB类第二代电流传输器（CCII）。建议的基于CNTFET的AB CCII类（CNTFET-CCII）的性能已通过更改碳纳米管（CNT）的数量（N），CNT间​​距（S）和CNT直径（D _{CNT）进行了优化}）。建议的CCII已与常规的基于CMOS的AB CCII（CMOS-CCII）进行了比较。仿真研究表明，在拟议的CCII中，电压和电流带宽（BW）增加了两个数量级，端子X的电阻减小了约31％，Y电阻的大小增加了两个数量级，总谐波失真和功耗得到了提高。与传统的CMOS-CCII相比分别减少了约62％和约56％。拟议中的CNTFET‐CCII首次用于实现方波/三角波发生器。已经观察到，建议的基于CCII的波形发生器在从161 KHz到0.79 Hz的非常宽的频率范围内，提供较少失真的输出和对温度不敏感的行为。此外，