In the growth of InGaN/GaN multi-quantum well (MQW) by metal organic chemical vapor deposition (MOCVD), V-defects have been observed and investigated. From cross-sectional transmission electron microscopy, we found that all V-defects are not always connected with threading dislocations (TD) at their bottom. By increasing the indium composition in the In_xGa_1−xN well layer, many V defects are generated from the stacking mismatch boundaries. The formation mechanism of these defects has been discussed in terms of stress induced by lattice mismatch and reduced In incorporation on the {1011} planes in comparison to the (0001) surface. The V-defect is correlated with the localized excitonic recombination centers that give rise to a long-wavelength shoulder in photoluminescence (PL). The InGaN/GaN multi-quantum well (MQW) grown on the {1011} faceted sidewalls of the V-defects gave much lower emission energies than those of the c-plane multi-quantum well (MQW).

在通过金属有机化学气相沉积（MOCVD）生长InGaN / GaN多量子阱（MQW）中，已经观察到并研究了V缺陷。从横截面透射电子显微镜观察，我们发现，所有的V形缺陷并不总是与底部的螺纹位错（TD）有关。通过增加In _x Ga _{1- x中}的铟成分在N阱层中，许多V缺陷是由堆叠失配边界产生的。这些缺陷的形成机理已根据晶格失配引起的应力进行了讨论，与（0001）表面相比，它们在{1011}面上的掺入减少。V缺陷与局部激子复合中心相关，后者在光致发光（PL）中引起长波长的肩峰。在V缺陷的{1011}刻面侧壁上生长的InGaN / GaN多量子阱（MQW）的发射能量比c平面多量子阱（MQW）的低得多。