Abstract

The dependence of the threshold intensity of the electron beam (EB) on the pulse shape and duration upon lasing excitation in a laser semiconductor target (ST) is considered. It is shown that a minimum EB threshold intensity can be reached before the pulse end in the case of sinusoidal pulses. The possibility of decreasing the EB threshold intensity and laser radiation duration under the ST excitation by a train of high-frequency EB pulses. The results obtained can be used in calculating the EB threshold intensity, to excite generation of subnanosecond laser radiation pulses for the time t ≤ τ, where τ is the lifetime of excess carriers in the ST.

中文翻译：

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电子束激发脉冲对激光半导体靶材激光阈值的影响

摘要

考虑了在激光​​半导体靶（ST）中的激光激发时电子束（EB）的阈值强度对脉冲形状和持续时间的依赖性。结果表明，在正弦脉冲情况下，可以在脉冲结束之前达到最小EB阈值强度。通过一系列高频EB脉冲在ST激发下降低EB阈值强度和激光辐射持续时间的可能性。所获得的结果可以在计算EB阈值强度被使用，以激发产生亚纳秒激光辐射脉冲的时间吨≤τ，其中τ是在ST过量载流子的寿命。