This paper showcases a passive single side-band (SSB) subharmonically pumped (SHP) GaN on Si mixer intended for operation in the Ku band. A passive topology has been selected in order to test the viability of these kinds of designs for GaN applications. By utilising the SSB SHP mixer, it is possible to reduce the energy consumption of a complete transmission system implementation. Two techniques to enhance the performance of the mixer are tested. First, the quasi-lumped method has been employed to reduce the size of the stubs needed to implement the mixer topology. Secondly, octagonal tapered inductors were used to obtain higher quality factors and narrow the frequency response of the lumped-element hybrids. The final design occupies an area of $2720\mathrm{\mu }\text{m}\times 1514\mathrm{\mu }\text{m}$, including pads. Measurements show a performance in line with the simulations, with a slight increase in its losses with respect to the simulation results. Through the measurement of a transistor of the technology, it is demonstrated that this deviation is caused by the variability of the process and its low technology readiness level (TRL). The results are very promising and prove the advantages of implementing passive mixers for high-frequency applications in GaN on Si technologies.

本文展示了打算在Ku波段工作的Si混合器上的无源单边带（SSB）次谐波泵浦（SHP）GaN。为了测试这些用于GaN应用的设计的可行性，已经选择了无源拓扑。通过使用SSB SHP混合器，可以减少完整传动系统实现的能耗。测试了两种增强混合器性能的技术。首先，已经采用准集总方法来减小实现混频器拓扑所需的存根的大小。其次，八角形锥形电感器用于获得更高的品质因数，并缩小集总元件混合器的频率响应。最终设计占地$2720\mathrm{\mu }\text{米}\times 1514\mathrm{\mu }\text{米}$，包括护垫。测量显示出与仿真一致的性能，其损耗相对于仿真结果略有增加。通过对该技术晶体管的测量，可以证明该偏差是由工艺的可变性及其较低的技术准备水平（TRL）引起的。结果非常有希望，并证明了在GaN on Si技术中为高频应用实现无源混频器的优势。