Phase change memory materials are semiconducting alloys used in optical- and resistivity-based memory devices that have large differences in optoelectronic properties between the amorphous and crystalline states. Alloys for memory applications must have a low crystallization rate at service temperatures so the written memory remains stable for long times. GeSb₆Te may be attractive for use because of its rapid crystallization at high temperatures, but its low temperature crystallization behavior has not been fully assessed. Here, the crystallization parameters of amorphous films of GeSb₆Te are characterized using in-situ hot stage optical microscopy under isothermal conditions for temperatures ranging from 185 °C to 195 °C. Individual grain sizes were tracked as well as the percent of material crystallized, from which the direct measurement of the crystal growth rate and Johnson-Mehl-Avrami-Kolmogorov parameters were calculated. GeSb₆Te was found to have comparable growth and crystallization rates in the low temperature region as other growth-dominated phase change materials.

相变存储材料是用于基于光学和电阻率的存储设备中的半导体合金，在非晶态和晶态之间的光电特性差异很大。用于存储器的合金必须在使用温度下具有较低的结晶速率，因此写入的存储器可长期保持稳定。GeSb ₆ Te可能因在高温下快速结晶而吸引使用，但其低温结晶行为尚未得到充分评估。在此，使用原位表征GeSb ₆ Te非晶薄膜的结晶参数在185°C至195°C等温条件下的热台光学显微镜。跟踪各个晶粒尺寸以及结晶材料的百分比，从中可以直接测量晶体生长速率和Johnson-Mehl-Avrami-Kolmogorov参数。发现GeSb ₆ Te在低温区域具有与其他以生长为主的相变材料相当的生长和结晶速率。