In this paper, the effects of sodium sulfosalicylate on hemimorphite activation were studied. Sulfosalicylic acid ions enhanced the sulfidation-flotation process, which increased the flotation recovery by 49.70%, and after lead ion assisted activation, the flotation recovery subsequently increased by 13.11%. Time-of-flight secondary ion spectrometry (TOF-SIMS) surface analysis revealed that the surface structure of the hemimorphite was greatly damaged by sodium sulfosalicylate, which could promote ZnS film formation for obtaining hemimorphite hydrophobicity. The ZnS film thickness on the hemimorphite surface was approximately 41.78 nm with direct sulfidation. After activating sulfidation, excellent flotation effects were obtained as the ZnS film reached about 418.19 nm. 3D images showed a heterogeneous and homogeneous ZnS film on the hemimorphite surface after direct sulfidation and activating sulfidation, respectively. The X-ray photoelectron spectroscopy (XPS)-based analysis of the substances on the hemimorphite surface further indicated that the atomic concentration of sulfur on the surface of the activating sulfidation hemimorphite nearly double that of the direct sulfidation hemimorphite (1.57% versus 2.38%, respectively). After activating sulfidation, the XPS spectra indicated that a deep complexation reaction occurred with sodium sulfosalicylate on the hemimorphite surface with various elements and significantly influenced elemental distribution on the hemimorphite surface.

本文研究了磺基水杨酸钠对半晶石活化的影响。磺基水杨酸离子增强了硫化-浮选过程，使浮选回收率提高了49.70％，在铅离子辅助活化后，浮选回收率随后提高了13.11％。飞行时间二次离子光谱（TOF-SIMS）表面分析表明，亚磺基水杨酸钠极大地破坏了半晶石的表面结构，可促进ZnS膜的形成，从而获得半晶石的疏水性。通过直接硫化，半晶石表面上的ZnS膜厚度约为41.78 nm。激活硫化后，当ZnS膜达到约418.19 nm时，可获得出色的浮选效果。3D图像分别显示了直接硫化和活化硫化后，半晶石表面上的异质和均质ZnS膜。基于X射线光电子能谱（XPS）的半晶石表面物质分析进一步表明，活化硫化半晶石表面硫的原子浓度几乎是直接硫化半晶石表面硫的原子浓度的两倍（1.57％对2.38％，分别）。活化硫化后，XPS光谱表明，在具有各种元素的半晶石表面上，磺基水杨酸钠发生了深层络合反应，并显着影响了半晶石表面上的元素分布。基于X射线光电子能谱（XPS）的半晶石表面物质分析进一步表明，活化硫化半晶石表面硫的原子浓度几乎是直接硫化半晶石表面硫的原子浓度的两倍（1.57％对2.38％，分别）。激活硫化后，XPS光谱表明，在具有各种元素的半晶石表面上，磺基水杨酸钠发生了深层络合反应，并显着影响了半晶石表面上的元素分布。基于X射线光电子能谱（XPS）的半晶石表面物质分析进一步表明，活化硫化半晶石表面硫的原子浓度几乎是直接硫化半晶石表面硫的原子浓度的两倍（1.57％对2.38％，分别）。激活硫化后，XPS光谱表明，在具有各种元素的半晶石表面上，磺基水杨酸钠发生了深层络合反应，并显着影响了半晶石表面上的元素分布。