The influences of Ar[Formula: see text] energy and low-energy sputtering on the structure of Cu–W thin film prepared by double-ion-beam sputtering are studied. Results show that the Cu–W thin film sputtered by ion beam onto a Cu substrate is in the form of an amorphous tungsten framework mechanically mixed with Cu grains when the Cu-target Ar[Formula: see text] energy is within 1–2[Formula: see text]keV and the W-target Ar[Formula: see text] energy is 3[Formula: see text]keV. The Cu grain size increases slightly, increasing the Cu-target Ar[Formula: see text] energy. When the Ar[Formula: see text] energy increases to the critical value ([Formula: see text][Formula: see text]keV), a small amount of Cu is transformed into a single crystal, forming a solid solution with the melting of W. Due to crystal defects and lattice distortion, there is a small shift in the Cu diffraction peak.

中文翻译：

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两离子束溅射制备过程中Ar+能量和低能束流轰击对Cu-W薄膜结构的影响

研究了Ar[公式：见正文]能量和低能溅射对双离子束溅射制备Cu-W薄膜结构的影响。结果表明，当Cu靶Ar[公式：见正文]能量在1-2[公式：见文]keV，W-target Ar[公式：见文]能量为3[公式：见文]keV。Cu晶粒尺寸略有增加，增加了Cu靶Ar[公式：见正文]能量。当Ar[公式：见文]能量增加到临界值（[公式：见文][公式：见文]keV）时，少量Cu转变为单晶，随着熔化形成固溶体W. 由于晶体缺陷和晶格畸变，