Amorphous and crystalline Zn[Formula: see text]CoxS ([Formula: see text], 0.3, 0.5) thin films were grown on sapphire (Al2O3) substrates by pulsed laser deposition at substrate temperature of 25∘C and 800∘C, respectively. The X-ray diffraction results show that the crystalline film has a cubic zinc blende structure and the crystalline quality decreased with increasing Co-doping concentration. The X-ray diffraction and X-ray photoelectron spectroscopy spectra reveal that the samples reached an overdoping state at Co-doping concentration of [Formula: see text]. The absorbance of films increases and the absorption edge shifts to longer wave length direction with increasing Co-doping concentration. The redshift of the band gap energy depends on the Co composition associating with the Urbach energy. Furthermore, the refractive index and dielectric constant increase with increasing Co-doping concentration. The dispersion parameters, such as dispersion energy ([Formula: see text]), oscillator energy ([Formula: see text]), static refractive index ([Formula: see text]), static dielectric constant ([Formula: see text]), interband transition strength moments ([Formula: see text] and [Formula: see text]), oscillator strength [Formula: see text] and oscillator wavelength [Formula: see text], have been analyzed by Wemple–DiDomenico single oscillator model. All these parameters were found to be dependent upon the Co-doping concentration in the Zn[Formula: see text]CoxS thin films.

中文翻译：

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Co浓度对Zn1-xCoxS薄膜结构和光学性能的影响

无定形和结晶锌[分子式：见正文]CoXS ([公式：见正文], 0.3, 0.5) 薄膜在蓝宝石（Al2○3) 在基板温度为 25 时通过脉冲激光沉积基板∘C和800∘C，分别。X射线衍射结果表明，该结晶薄膜具有立方闪锌矿结构，且结晶质量随着Co掺杂浓度的增加而降低。X射线衍射和X射线光电子能谱表明样品在共掺杂浓度为[公式：见正文]时达到了过掺杂状态。随着共掺杂浓度的增加，薄膜的吸光度增加，吸收边缘向更长的波长方向移动。带隙能量的红移取决于与 Urbach 能量相关的 Co 成分。此外，折射率和介电常数随着共掺杂浓度的增加而增加。色散参数，如色散能量（[公式：见正文]）、振荡器能量（[公式：见正文]）、静态折射率（[公式：见正文]）见正文]）、静态介电常数（[公式：见正文]）、带间跃迁强度矩（[公式：见正文]和[公式：见正文]）、振荡器强度[公式：见正文]和振荡器波长[公式：见正文]，已通过 Wemple-DiDomenico 单振荡器模型进行了分析。发现所有这些参数都取决于 Zn[公式：见正文]Co 中的共掺杂浓度XS 薄膜。