A new avalanche photodiode device applied to a visible light communication (VLC) system is designed using a standard 0.18 [Formula: see text]m complementary metal oxide semiconductor process. Compared to regular CMOS APD devices, the proposed device adds a [Formula: see text]-well layer above the deep [Formula: see text]-well/[Formula: see text]-substrate structure, and an [Formula: see text]/[Formula: see text] layer is deposited upon it. The [Formula: see text]/[Formula: see text] layer acts as an avalanche breakdown layer of the device, and an STI structure is used to prevent the edge break prematurely. The simulation results shows that the avalanche breakdown voltage is as low as 9.9 V, dark current is below [Formula: see text] A under −9.5 V bias voltage, and the 3 dB bandwidth is of 5.9 GHz. It is due to the use of the 0.18 [Formula: see text]m CMOS process-specific STI protection ring and short-circuits the connection of the deep [Formula: see text]-well/[Formula: see text]-substrate, and the dark current is reduced to be lower than two orders of magnitude compared to regular CMOS APD. Gain and noise characteristics are accurately calculated from Hayat dead-space model applied to this CMOS APD. So, this device’s gain and excess noise factor are 20 and 2.5, respectively.

中文翻译：

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采用 0.18 μm CMOS 技术的速度优化、低噪声 APD，适用于 VLC 应用

一种应用于可见光通信 (VLC) 系统的新型雪崩光电二极管器件采用标准的 0.18 [公式：见正文]m 互补金属氧化物半导体工艺设计。与常规 CMOS APD 器件相比，该器件在深层 [公式：见文本]-well/[公式：见文本]-基板结构之上增加了一个 [公式：见文本]-well 层，以及一个 [公式：见文本]/[公式：见正文] 层沉积在其上。[公式：见正文]/[公式：见正文]层作为器件的雪崩击穿层，采用STI结构防止边缘过早断裂。仿真结果表明，在-9.5 V偏置电压下，雪崩击穿电压低至9.9 V，暗电流低于[公式：见正文]A，3 dB带宽为5.9 GHz。这是由于使用了 0.18 [公式：见文]m CMOS工艺专用STI保护环和短路深[公式：见文]-well/[公式：见文]-substrate的连接，暗电流降低到低于两个数量级与普通 CMOS APD 相比，数量级。根据应用于该 CMOS APD 的 Hayat 死区模型准确计算增益和噪声特性。因此，该器件的增益和过量噪声因数分别为 20 和 2.5。