Emerging memory technologies promise new memories to store more data at less cost. On the other hand, the scaling of silicon-based chips approached its physical limits. Nonvolatile memory technologies, such as resistive random-access memory (RRAM), are trying to solve this problem. The fundamental study in RRAM devices still needs to be moved further. In this regard, conduction mechanism of RRAM is focused in this study. The RRAM conductance varies considerably depending on the material used in the dielectric layer and selection of electrodes. To formulate the conductance mechanism, new materials with notable conductivity such as graphene oxide (GO) sheets has been employed by researchers. In the GO-based RRAM, pristine of GO due to the presence of sp3-hybridized oxygen functional groups(hydroxyl) leads to electrically insulating layers in the device. However, by applying the voltage, the conductive path can be formed with the redox of GO layer in to graphene. This phenomenon is known as RRAM set process which can be explained due to the conversion of sp3 to sp2 oxygen functionalities, which make the RRAM to move in to the ON state. Also, in this paper, variation of the ON state resistance by the voltage in the nondegenerate mode is described and the reset process by degeneracy variation is reported.

中文翻译：

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用于电阻随机存取存储器应用的石墨烯带工程

新兴的内存技术承诺新的内存能够以更低的成本存储更多数据。另一方面，硅基芯片的规模化接近了它的物理极限。非易失性存储器技术，例如电阻式随机存取存储器 (RRAM)，正试图解决这个问题。RRAM 器件的基础研究仍需进一步推进。在这方面，RRAM的传导机制是本研究的重点。RRAM 电导的变化很大，这取决于电介质层中使用的材料和电极的选择。为了制定电导机制，研究人员采用了具有显着电导率的新材料，例如氧化石墨烯 (GO) 片材。在基于 GO 的 RRAM 中，由于 sp 的存在，GO 的原始状态3-杂化的氧官能团（羟基）导致器件中的电绝缘层。然而，通过施加电压，可以形成导电路径，其中GO层的氧化还原进入石墨烯。这种现象被称为 RRAM 设置过程，可以解释为 sp 的转换3发2氧功能，使 RRAM 进入 ON 状态。此外，在本文中，描述了非简并模式下电压对导通状态电阻的变化，并报告了简并变化引起的复位过程。