We investigate the effect of a memristive element on the dynamics of a chaotic system. For this purpose, the chaotic Chua’s oscillator is extended by a memory element in the form of a double-barrier memristive device. The device consists of [Formula: see text]/Al2O3/Al/Nb layers and exhibits strong analog-type resistive changes depending on the history of the charge flow. In the obtained system we observe strong changes in the dynamics of chaotic oscillations. The otherwise fluctuating amplitudes of Chua’s system are disrupted by transient silent states. Numerical simulations and analysis of the extended model reveal that the underlying dynamics possesses slow–fast properties due to different timescales between the memory element and the base system. Furthermore, the stabilizing and destabilizing dynamic bifurcations are identified that are traversed by the system during its chaotic behavior.

中文翻译：

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具有强不对称忆阻元件的混沌系统中的慢-快动力学

我们研究了忆阻元件对混沌系统动力学的影响。为此，混沌蔡氏振荡器由双势垒忆阻器件形式的存储元件扩展。该装置由[公式：见正文]/Al组成2○3/Al/Nb 层，并根据电荷流的历史表现出强烈的模拟型电阻变化。在获得的系统中，我们观察到混沌振荡动力学的强烈变化。Chua 系统的其他波动幅度被瞬态静默状态破坏。扩展模型的数值模拟和分析表明，由于存储元件和基础系统之间的时间尺度不同，基础动力学具有慢-快特性。此外，确定了系统在其混沌行为期间穿过的稳定和不稳定动态分岔。