Interfacial diffusions and/or chemical reactions are one of the key issues for the reliability of CoSb3-based skutterudite thermoelectric (TE) joint, especially for the [Formula: see text]-type joint, which limits the applications of TE devices. We investigate the interfacial evolution for [Formula: see text]-type CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints ([Formula: see text]–1, [Formula: see text], 3, 4) and combine the previous study on [Formula: see text]-type Yb[Formula: see text]Co4Sb[Formula: see text]/Nb joint to demonstrate the effect of TE materials on the interfacial microstructure and interfacial resistivity. The reaction–diffusion kinetic analysis shows that the TE materials has little effect on chemical reactions but strongly influence the Sb diffusions. The low energy barrier of Sb diffusion leads to the absent phase decomposition of skutterudites in CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints. The interfacial resistivity of CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints is related with Fe content and the interfacial reaction layer (IRL) growth. In addition, since the interfacial reaction layer growth rate and interfacial resistivity of CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints are both low, Nb is an adequate barrier layer candidate material.

中文翻译：

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p型CeyFexCo4-xSb12/Nb热电接头的界面行为

界面扩散和/或化学反应是 CoSb 可靠性的关键问题之一3型方钴矿热电（TE）接头，特别是[公式：见正文]型接头，限制了TE器件的应用。我们研究 [公式：见正文] 型 Ce 的界面演变是的铁XCo[公式：见文]Sb[公式：见文]/Nb关节（[公式：见文]–1、[公式：见文]、3、4）并结合前人对[公式：见文]的研究-type Yb[公式：见正文]Co4Sb[公式：见正文]/Nb 接头，以证明 TE 材料对界面微观结构和界面电阻率的影响。反应-扩散动力学分析表明，TE材料对化学反应的影响很小，但对Sb扩散的影响很大。Sb 扩散的低能垒导致方钴矿在 Ce 中不存在相分解是的铁XCo[公式：见正文]Sb[公式：见正文]/Nb 接头。Ce的界面电阻率是的铁XCo[公式：见正文]Sb[公式：见正文]/Nb接头与Fe含量和界面反应层（IRL）生长有关。此外，由于 Ce 的界面反应层生长速率和界面电阻率是的铁XCo[公式：见正文]Sb[公式：见正文]/Nb 接头均低，Nb 是合适的阻挡层候选材料。