This article presents the design and development of surface electrode ion traps on glass and Si substrates and their radio frequency (RF) characterizations and performance benchmarking. In this case, the ion trap on glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion traps on glass have a ${Q}$ factor of greater than 900. This is significantly higher than the ${Q}$ factor of its silicon counterparts, which are around 20–300. Such a high ${Q}$ factor results in power spectral density (PSD) of greater than 10 W/MHz. On the other hand, ion traps on silicon produce PSD values of lower than 3 W/MHz. In terms of RF performance, the ion trap on glass shows insertion loss lower than 0.2 dB at 60 MHz. This is more superior to insertion loss values of ion traps on silicon, which are around 1–4 dB. The ion-traps metallization is developed using three metallization layers (0.1- $\mu \text{m}$ Ti barrier layer, 2.5–3.7- $\mu \text{m}$ Cu, and 0.3- $\mu \text{m}$ Au) on top of the dielectric. The on-chip resonance condition can be maintained upon packaging integration. The laser optical setup for ion trapping is verified to capture a single ⁸⁸ Sr ⁺ ion.

中文翻译：

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具有射频分析和性能基准的玻璃和硅基板上单量子位离子阱的设计与开发

本文介绍了玻璃和硅衬底上的表面电极离子阱的设计和开发及其射频（RF）表征和性能基准测试。在这种情况下，玻璃上的离子阱在所有必要条件下均表现出卓越的性能。在射频特性方面，玻璃上的离子阱具有 $ {Q} $ 系数大于900。这大大高于 $ {Q} $ 其硅对应物的系数约为20–300。这么高 $ {Q} $ 因数导致功率谱密度（PSD）大于10 W / MHz。另一方面，硅上的离子阱产生的PSD值低于3 W / MHz。在射频性能方面，玻璃上的离子阱在60 MHz时的插入损耗低于0.2 dB。这比硅上离子阱的插入损耗值（约1–4 dB）更好。离子阱金属化使用三个金属化层（0.1- $ \ mu \ text {m} $ 钛阻挡层，2.5–3.7- $ \ mu \ text {m} $ 铜和0.3- $ \ mu \ text {m} $ Au）在介电层上方。封装集成后可以保持片上谐振状态。经验证，用于离子阱的激光光学装置可捕获单个⁸⁸ Sr ⁺离子。