Poly(ether-ketone)/hexagonal boron nitride (h-BN) composites reinforced with micrometer-sized h-BN particles were investigated. The composites exhibited glass transition temperature (T_g) and thermal stability over 160°C and 560°C, respectively. The melting point and peak crystallization temperatures of the composites decreased up to 17°C and 12°C, respectively. The linear CTE of the composites decreased both below and above the T_g. The storage modulus increased with increasing h-BN content at all temperatures (50–250°C). The composites possessed excellent dielectric properties with insignificant dispersion with increasing frequency. Thus, resultant composites are promising candidates for the printed circuit boards/electronic substrates.

研究了微米级h-BN颗粒增强的聚（醚-酮）/六方氮化硼（h-BN）复合材料。该复合材料分别在160℃和560℃下表现出玻璃化转变温度（T _g）和热稳定性。复合材料的熔点和峰值结晶温度分别降低到17°C和12°C。复合材料的线性CTE在T _g以下和以上均下降。在所有温度（50–250°C）下，储能模量均随着h-BN含量的增加而增加。复合材料具有优异的介电性能，随频率增加分散性不明显。因此，所得的复合材料是印刷电路板/电子基板的有希望的候选物。