ABSTRACT Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe2, WS2 and WSe2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>108 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.

中文翻译：

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基于 2D 材料的 RRAM 器件的十年：回顾


摘要 二维 (2D) 材料由于其超薄、柔性和多层结构，在过去十年中提供了独特的电气、化学、机械和物理性能。这些层状材料被用于各种应用的众多电子设备中，本次综述将特别关注基于 2D 材料及其纳米复合材料的电阻式随机存取存储器 (RRAM)。这项研究介绍了基于 2D 材料的 RRAM 的器件结构、传导机制、电阻开关特性、制造技术、挑战和未来方面。石墨烯、石墨烯衍生物和MoS2已成为RRAM应用的二维材料的主要贡献者；然而，该家族的其他成员，例如 hBN、MoSe2、WS2 和 WSe2，最近也作为非易失性 RRAM 器件的功能材料进行了检验。这些器件中的传导通常由金属离子的渗透或固有物质的迁移主导。基于 2D 材料的 RRAM 器件最突出的优点包括开关速度快（<10 id=0>10 年）、高电气耐久性（>108 个电压周期）和扩展的机械鲁棒性（500 个弯曲周期）。通过将二维材料与各种形式的金属纳米颗粒、有机聚合物和无机半导体混合，进一步增强了二维材料的阻变特性。