ABSTRACT This article reviews advanced polishing, grinding and finishing processes for challenging manufacturing applications. The topics covered are machining of advanced alloys; machining of wafers; strengths of dies after machining; grinding and polishing for wafer level packages; hybrid finishing processes; magnetorheological finishing; cooling and lubrication; dental, implant and clinical applications; grinding of metal matrix composites; machining of other brittle materials; fixed abrasive polishing; vibratory finishing; and truing, kinematics and wear of tools. Findings include that a novel three-layered ice-bonded abrasive tool was proposed to polish Ti-6Al-4V. Wafer strengths and corresponding finishing processes are challenging issues for manufacturing of microelectronics devices. The processes could significantly enhance or reduce package strengths. Burrs were minimized to zero after grinding of honeycomb using a novel wheel with small asperities on its grinding surface. Polishing of silicon substrates using a fixed abrasive pad largely shortened the polishing time. Traditionally, grinding required flood coolant, which caused various environmental problems. Recently, more companies demand reduced coolant to respond to environmental requirements. Therefore, minimum quantity of lubrication has become a novel research trend for the benefits of the environment, health and costs. Innovative approaches led to good cooling, smooth surfaces ground with low roughness and low grinding forces. Abbreviations 3PB: 3-point bending; 4PB: 4-point bending; ANN: artificial neural network; BEMRF: ball end magnetorheological finishing; CMP: chemical mechanical polishing; DTM: difficult-to-machine; EDM: electric discharge machining; EMC: epoxy mold compound; FOWLP: fan-out wafer level package; IC: integrated circuit; LCD: liquid crystal display; MAF: magnetic abrasive finishing; MRF: magnetorheological finishing; MRR: material removal rate; MMC: metal matrix composite; MQCF: minimum quantity cutting fluid; MQL: minimum quantity of lubrication; MWCNT: multi-walled carbon nanotube; RSM: response surface methodology; SQL: small-quantity cooling and lubrication; SSD: sub-surface damage; 3D: three-dimensional; TSV: through-silicon via; UV: ultraviolet; WLCSP: wafer level chip scale package; WC: tungsten carbide

中文翻译：

---

适用于各种制造应用的高级抛光、研磨和精加工工艺：综述

摘要 本文回顾了具有挑战性的制造应用的先进抛光、研磨和精加工工艺。涵盖的主题是高级合金的加工；晶圆加工；加工后模具的强度；晶圆级封装的研磨和抛光；混合整理工艺；磁流变整理；冷却和润滑；牙科、种植体和临床应用；金属基复合材料的研磨；其他脆性材料的加工；固定磨料抛光；振动整理；以及工具的修整、运动学和磨损。研究结果包括提出了一种新型的三层冰结磨具来抛光 Ti-6Al-4V。晶圆强度和相应的精加工工艺是微电子器件制造的挑战性问题。这些过程可以显着提高或降低包装强度。使用磨削表面具有小凹凸的新型砂轮磨削蜂窝后，毛刺降至零。使用固定研磨垫抛光硅基板大大缩短了抛光时间。传统上，磨削需要大量冷却液，这会导致各种环境问题。最近，越来越多的公司要求减少冷却剂以响应环境要求。因此，考虑到环境、健康和成本的好处，最小量的润滑已成为一种新的研究趋势。创新方法导致良好的冷却、光滑的表面、低粗糙度和低磨削力。缩写 3PB：3 点弯曲；4PB：4点弯曲；ANN：人工神经网络；BEMRF：球头磁流变精加工；CMP：化学机械抛光；DTM：难加工；EDM：电火花加工；EMC：环氧模塑料；FOWLP：扇出晶圆级封装；IC：集成电路；LCD：液晶显示；MAF：磁性研磨精加工；MRF：磁流变整理；MRR：材料去除率；MMC：金属基复合材料；MQCF：最小量切削液；MQL：最小润滑量；MWCNT：多壁碳纳米管；RSM：响应面法；SQL：少量冷却和润滑；SSD：次表面损坏；3D：三维；TSV：硅通孔；UV：紫外线；WLCSP：晶圆级芯片规模封装；WC：碳化钨 液晶显示器; MAF：磁性研磨精加工；MRF：磁流变整理；MRR：材料去除率；MMC：金属基复合材料；MQCF：最小量切削液；MQL：最小润滑量；MWCNT：多壁碳纳米管；RSM：响应面法；SQL：少量冷却和润滑；SSD：次表面损坏；3D：三维；TSV：硅通孔；UV：紫外线；WLCSP：晶圆级芯片规模封装；WC：碳化钨 液晶显示器; MAF：磁性研磨精加工；MRF：磁流变整理；MRR：材料去除率；MMC：金属基复合材料；MQCF：最小量切削液；MQL：最小润滑量；MWCNT：多壁碳纳米管；RSM：响应面法；SQL：少量冷却和润滑；SSD：次表面损坏；3D：三维；TSV：硅通孔；UV：紫外线；WLCSP：晶圆级芯片规模封装；WC：碳化钨 次表面损伤；3D：三维；TSV：硅通孔；UV：紫外线；WLCSP：晶圆级芯片规模封装；WC：碳化钨 次表面损伤；3D：三维；TSV：硅通孔；UV：紫外线；WLCSP：晶圆级芯片规模封装；WC：碳化钨