ABSTRACT The research presented here deals with laser micro engraving of silicon carbide material. For conducting the experiments considered laser parameters were current, pulse frequency and scan speed. The design of experiment was performed with the help of Taguchi orthogonal array. The significance of laser micro engraving variables on the MRR and mark width was studied. The result indiactes that the laser parameter has a significant influence on MRR and mark width. Current was determined to be the prominent factor followed by pulse frequency and scan speed in both senario. The obtained results depict that the laser beam can be efficiently utilized for engraving process in silicon carbide. Further, various decision-making techniques such as WASPAS, MOORA, EDAS and TOPSIS were compared and optimal engraving condition was achieved. A mid-level current along with high pulse frequency and low scanning speed will be ideal to simultaneously obtain good material removal and mark width.

中文翻译：

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碳化硅激光束微雕

摘要 这里介绍的研究涉及碳化硅材料的激光显微雕刻。为了进行实验，考虑的激光参数是电流、脉冲频率和扫描速度。实验设计是在田口正交阵列的帮助下进行的。研究了激光微雕变量对 MRR 和标记宽度的重要性。结果表明激光参数对MRR和标记宽度有显着影响。在这两种情况下，电流被确定为主要因素，其次是脉冲频率和扫描速度。所得结果表明激光束可以有效地用于碳化硅的雕刻工艺。此外，还比较了 WASPAS、MOORA、EDAS 和 TOPSIS 等各种决策技术，并实现了最佳雕刻条件。