It has been proved that the thermoelectric performance of p-type SnSe crystals can be optimized through enhancing carrier concentration. The calculations of electronic band structure elucidate that this approach can be interpreted by including multiple valence bands. To better estimate the potential performance, we proposed the transport properties for p-type SnSe crystals and analyzed the weighted mobility from the experimental results. The weighted mobility approaches ∼600 cm²V⁻¹s⁻¹ when the carrier concentration is as high as ∼6.3 × 10¹⁹ cm⁻³. Combined with obtained lattice thermal conductivity, through rising carrier concentration, the quality factor B possesses significant improvements of ∼235% and 138% at 300 K and 773 K, respectively. Through comparing weighted mobility and Hall mobility, two effective mass values ∼0.9 m_e and 1.8 m_e can be derived using carrier concentrations. It is expected that the ZT ∼1.0 at 300K and ZT ∼2.9 at 773 K can be obtained when the carrier concentration of ∼8.0 × 10¹⁹ cm⁻³ and the effective mass ∼1.8 m_e were selected. This work provides an alternative way to comprehend the performance optimization in thermoelectric community.

业已证明，可以通过提高载流子浓度来优化p型SnSe晶体的热电性能。电子带结构的计算阐明了可以通过包括多个价带来解释该方法。为了更好地估计潜在的性能，我们提出了p型SnSe晶体的传输性质，并根据实验结果分析了加权迁移率。当载流子浓度高达〜6.3×10 ¹⁹  cm ^-3时，加权迁移率接近〜600 cm ² V ^-1 s ^-1。结合获得的晶格热导率，通过提高载流子浓度，提高品质因数B在300 K和773 K时分别具有〜235％和138％的显着提高。通过比较加权迁移率和霍尔迁移率，可以使用载流子浓度得出两个有效质量值〜0.9 m _e和1.8 m _e。据预计，所述ZT〜1.0在300K和ZT ~2.9在773 K可的〜8.0×10载流子浓度时，可以得到¹⁹ 厘米^-3和有效质量〜1.8米_ë选择。这项工作提供了一种理解热电社区性能优化的替代方法。