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Semiconductor technologies for 5G implementation at millimeter wave frequencies – Design challenges and current state of work
Engineering Science and Technology, an International Journal ( IF 5.1 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.jestch.2020.06.012
Sagar Juneja , Rajendra Pratap , Rajnish Sharma

Abstract Almost all cellular mobile communications of today take place in sub 3 GHz band that has now become too crowded to support future demands of increasing mobile data traffic. Therefore a new paradigm has been explored for designing next generation cellular communication system (i.e. 5G) using 28 GHz and 39 GHz millimeter wave (mmW) frequency bands. In 2016 Federal Communications Commission (FCC) allocated licensed spectrum of 3.85 GHz in these mmW bands for 5G implementation. There are many unique challenges faced while working with semiconductor technologies at mmW frequencies that are discussed in this paper along with the opportunities and current state of the art in the field. The paper systematically presents propagation related issues of mmW frequencies, effects of modern VLSI technologies in designing mmW circuits, role of passive components and their design issues, and modeling related issues in CMOS technology. The paper uses holistic approach to cover almost all aspects that are important to take into account while working at mmW frequencies for the design of semiconductor circuits for 5G applications.

中文翻译:

在毫米波频率下实现 5G 的半导体技术——设计挑战和当前工作状态

摘要 当今几乎所有的蜂窝移动通信都发生在 sub 3 GHz 频带中,该频带现在变得过于拥挤,无法支持未来不断增加的移动数据流量的需求。因此,已经探索了使用 28 GHz 和 39 GHz 毫米波 (mmW) 频带设计下一代蜂窝通信系统(即 5G)的新范例。2016 年,联邦通信委员会 (FCC) 在这些毫米波频段中分配了 3.85 GHz 的许可频谱用于 5G 实施。在使用毫米波频率的半导体技术时面临许多独特的挑战,本文将讨论这些挑战以及该领域的机遇和当前技术水平。该论文系统地介绍了毫米波频率的传播相关问题、现代超大规模集成电路技术在设计毫米波电路中的影响、无源元件的作用及其设计问题,以及 CMOS 技术中的建模相关问题。本文使用整体方法涵盖了在毫米波频率下工作以设计 5G 应用的半导体电路时需要考虑的几乎所有方面。
更新日期:2021-02-01
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