Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of I_on/I_off current ratio, transconductance, subthreshold slope, threshold voltage roll-off, and drain induced barrier lowering (DIBL). In addition, the scaling behavior of electronic figures of merit is comprehensively studied with the aid of physical simulations. The electrical characteristic of proposed structure is compared with a circular GAA-FET, which is previously calibrated with an IBM sample at the 22 nm channel length using 3D-TCAD simulations. Our simulation results show that sectorial cross section GAA-FET is a superior structure for controlling short channel effects (SCEs) and to obtain better performance compared to conventional circular cross section counterpart.

根据I _on / I _off评估具有扇形截面的硅沟道的全栅场效应晶体管（GAA-FET）新方案的可靠性和可控性电流比，跨导，亚阈值斜率，阈值电压下降和漏极引起的势垒降低（DIBL）。此外，借助物理模拟全面研究了电子品质因数的缩放行为。将拟议结构的电特性与圆形GAA-FET进行了比较，该圆形GAA-FET先前已使用3D-TCAD仿真在22 nm通道长度处用IBM样品进行了校准。我们的仿真结果表明，与传统的圆形横截面对应物相比，扇形横截面GAA-FET是一种用于控制短沟道效应（SCE）并获得更好性能的优良结构。